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Switching kinetics in normal and relaxor ferroelectrics: PZT thin films and PLZT ceramics

机译:普通和弛豫铁电体的开关动力学:PZT薄膜和PLZT陶瓷

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The switching process in normal and relaxor ferroelectrics was described as a result of evolution of domain structure. The original mathematical treatment allows to extract the main kinetic parameters from switching current and elastic light scattering data measured under the action of field pulses. Specific of domain kinetics in ferroelectric thin films and relaxor ceramics was demonstrated. The scenario of evolution of heterophase structure in relaxers during "switching" and spontaneous "backswitching" is proposed.
机译:作为域结构的演变,描述了正常和松弛率铁电气的切换过程。原始数学处理允许从场脉冲的作用下测量的开关电流和弹性光散射数据中提取主动力学参数。证明了铁电薄膜和弛豫陶瓷中的结构域动力学的特定。提出了在“切换”期间松弛剂中的杂相结构的演变的情况和自发性“后跟骨”。

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