NITRIDE-BASED SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD OF NITRIDE-BASED SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide: a nitride-based semiconductor laser element configured to have a ridge portion not damaged when a wafer is cleaved; and a method of manufacturing the nitride-based semiconductor laser element.;SOLUTION: The nitride-based semiconductor laser element is manufactured by cleaving and dividing a wafer 1 having a pad electrode 12 of height d_m formed on the ridge portion 10 and a protection portion 11 of height d_p. Further, the height d_p of the protection portion 11 is larger than the height d_m of the pad electrode 12, so that even when the wafer 1 is cleaved by applying a load thereto, for example, by pressing a blade against an (n)-side electrode 13 of the wafer 1, the protection portion 11 supports the wafer 1, thereby preventing the ridge portion 10 from being broken.;COPYRIGHT: (C)2009,JPO&INPIT