NITRIDE-BASED SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD OF NITRIDE-BASED SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser element capable of implementing WPE improvement and deterioration suppression of reliability property.;SOLUTION: A nitride-based semiconductor laser element 100 comprises: a substrate 1; a first conductivity type clad layer 3 disposed at an upper side of the substrate and consisting of a nitride-based semiconductor material; a luminescent layer disposed at an upper side of the first conductivity type clad layer 3 and consisting of a nitride-based semiconductor material; a second conductivity type semiconductor layer disposed at an upper side of the luminescent layer and consisting of a nitride-based semiconductor material; and a current constriction part 140 disposed at a lateral side of the first conductivity type clad layer 3. The current constriction part 140 includes a cavity that is disposed between the luminescent layer and the substrate 1.;SELECTED DRAWING: Figure 1A;COPYRIGHT: (C)2018,JPO&INPIT