NITRIDE-BASED SEMICONDUCTOR WAFER, NITRIDE-BASED SEMICONDUCTOR LASER ELEMENT, AND METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser element that allows reduction in cost while suppressing the degradation of its reliability.;SOLUTION: A nitride-based semiconductor laser element includes: an n-type GaN substrate 301; a nitride semiconductor layer 20 that is formed on the n-type GaN substrate 301; a waveguide 30 that is formed on the nitride semiconductor layer 20 and extends in a predetermined direction; a pair of side end faces that are parallel to the waveguide 30; a p-side pad electrode 13 that is formed on the nitride semiconductor layer 20 and is for supplying a current to the waveguide 30; and marker portions 320 and 330 for discriminating the kind of a nitride-based semiconductor laser element.;COPYRIGHT: (C)2013,JPO&INPIT