Magnetic memory cell, a magnetic random access memory, and data read / write method of the magnetic random access memory

摘要

The present invention provides a data write method of the new MRAM that can suppress the deterioration of the tunnel barrier layer. The magnetic memory cell 1 comprises a magnetic recording layer 10, a pinned layer 30, which is connected to the magnetic recording layer 10 via the non-magnetic layer 20. The magnetization reversal region 13, the first magnetization fixed region 11, the magnetic recording layer 10 includes a second magnetization fixed region 12. And a reversible magnetization, the magnetization reversal region 13 opposed to the pinned layer 30. The first magnetization fixed region 11, and is connected to the first boundary B1 of the magnetization inversion region 13, the direction of the magnetization is fixed in a first direction. It is connected to the second boundary B2 of the magnetization inversion region 13, the second magnetization fixed region 12 is fixed to the second direction is the direction of the magnetization. Both the direction to the magnetization reversal region 13, or, the first direction and the second direction is a direction away from the magnetization reversal region 13.