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A magnetic memory cell, a magnetic random access memory, and a data read / write method in the magnetic random access memory
A magnetic memory cell, a magnetic random access memory, and a data read / write method in the magnetic random access memory
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机译:磁性存储单元,磁性随机存取存储器以及磁性随机存取存储器中的数据读取/写入方法
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摘要
The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer. A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.
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