首页>
外国专利>
MULTIPLE TIME PROGRAMMABLE (MTP) PMOS FLOATING GATE-BASED NON-VOLATILE MEMORY DEVICE FOR A GENERAL PURPOSE CMOS TECHNOLOGY WITH THICK GATE OXIDE
MULTIPLE TIME PROGRAMMABLE (MTP) PMOS FLOATING GATE-BASED NON-VOLATILE MEMORY DEVICE FOR A GENERAL PURPOSE CMOS TECHNOLOGY WITH THICK GATE OXIDE
展开▼
机译:基于通用栅极CMOS技术和厚氧化层的基于多重时间可编程(MTP)PMOS浮栅的非易失性存储器
展开▼
页面导航
摘要
著录项
相似文献
摘要
A multiple time programmable (MTP) memory cell, in accordance with an embodiment, includes a floating gate PMOS transistor, a high voltage NMOS transistor, and an n-well capacitor. The floating gate PMOS transistor includes a source that forms a first terminal of the memory cell, a drain and a gate. The high voltage NMOS transistor includes a source connected to ground, an extended drain connected to the drain of the PMOS transistor, and a gate forming a second terminal of the memory cell. The n-well capacitor includes a first terminal connected to the gate of the PMOS transistor, and a second terminal forming a third terminal of the memory cell. The floating gate PMOS transistor can store a logic state. Combinations of voltages can be applied to the first, second and third terminals of the memory cell to program, inhibit program, read and erase the logic state.
展开▼