A process for the preparation of low resistivity arsenic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates.
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机译：一种制备低电阻率砷或磷掺杂（N + / N ++）硅片的方法，该硅片在基本上任何电子设备制造过程的热处理周期内都能可靠地形成氧沉淀。
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