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Multiple level cell phase-change memory devices having controlled resistance drift parameter, memory systems employing such devices and methods of reading memory devices
Multiple level cell phase-change memory devices having controlled resistance drift parameter, memory systems employing such devices and methods of reading memory devices
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机译：具有受控电阻漂移参数的多级单元相变存储器件，采用这种器件的存储系统以及读取存储器件的方法
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摘要
In a method of controlling resistance drift in a memory cell of a resistance-changeable material memory device, the resistance changeable material in the memory cell is treated so that a drift parameter for the memory cell is less than about 0.18, wherein a change in resistance of a memory cell over the time period is determined according to the relationship:; Rdrift=Rinitial×tα;;where Rdrift represents a final resistance of the memory cell following the time period, Rinitial represents the initial resistance of the memory cell following the programming operation, t represents the time period; and α represents the drift parameter.
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机译：在控制可变电阻材料存储装置的存储单元中的电阻漂移的方法中，对存储单元中的可变电阻材料进行处理，使得该存储单元的漂移参数小于约0.18，其中电阻变化根据该关系确定该时间段内存储单元的数量： <？in-line-formulae description =“在线公式” end =“线索”？> R 漂移 = R 初始 ×t α; <？in-line-formulae description =“ In-line Formulae” end =“ tail”？>;其中R drift 表示存储单元的最终电阻在该时间段之后，R initial 表示在编程操作之后存储单元的初始电阻，t表示时间段; α表示漂移参数。
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