Method for delineation of phase change memory (PCM) cells separated by PCM and upper electrode regions modified to have high film resistivity

摘要

A method for forming a Phase Change Material (PCM) cell structure comprises forming both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM is protected from damage by a conductive encapsulating layer. Electrical isolation between adjacent cells is provided by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof, thereby forming high electrical resistance regions between the cells.