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Phase change memory cells delineated by regions of modified film resistivity
Phase change memory cells delineated by regions of modified film resistivity
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机译:由改变的膜电阻率区域描绘的相变存储单元
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摘要
A Phase Change Memory (PCM) cell structure comprises both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM layer is protected from damage by the conductive encapsulating layer. Electrical isolation between adjacent PCM cells is provided by high electrical resistance regions which were formed by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof.
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