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Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation
Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation
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机译:在硅化之前使用离子注入来稳定CMOS器件中的单硅化镍薄膜
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摘要
A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.
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