Semiconductor device including a strained superlattice layer above a stress layer

摘要

A semiconductor device may include a stress layer and a strained superlattice layer above the stress layer and including a plurality of stacked groups of layers. More particularly, each group of layers of the strained superlattice layer may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.