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SEMICONDUCTOR DEVICE INCLUDING A FRONT SIDE STRAINED SUPERLATTICE LAYER AND A BACK SIDE STRESS LAYER AND ASSOCIATED METHODS
SEMICONDUCTOR DEVICE INCLUDING A FRONT SIDE STRAINED SUPERLATTICE LAYER AND A BACK SIDE STRESS LAYER AND ASSOCIATED METHODS
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机译:包括前侧应变超晶格层和后侧应力层的半导体器件及相关方法
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摘要
A semiconductor device may include a semiconductor substrate having front and back surfaces, a strained superlattice layer adjacent the front surface of the semiconductor substrate and comprising a plurality of stacked groups of layers, and a stress layer on the back surface of the substrate and comprising a material different than the semiconductor substrate. Each group of layers of the strained superlattice layer may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non- semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
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