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Co-doping for fermi level control in semi-insulating Group III nitrides
Co-doping for fermi level control in semi-insulating Group III nitrides
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机译:共掺杂用于半绝缘III族氮化物的费米能级控制
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摘要
Semi-insulating Group III nitride layers and methods of fabricating semi-insulating Group III nitride layers include doping a Group III nitride layer with a shallow level p-type dopant and doping the Group III nitride layer with a deep level dopant, such as a deep level transition metal dopant. Such layers and/or method may also include doping a Group III nitride layer with a shallow level dopant having a concentration of less than about 1×1017 cm−3 and doping the Group III nitride layer with a deep level transition metal dopant. The concentration of the deep level transition metal dopant is greater than a concentration of the shallow level p-type dopant.
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机译:半绝缘的III族氮化物层和制造半绝缘的III族氮化物层的方法包括用浅能级的p型掺杂剂掺杂III族氮化物层和用深能级的掺杂剂(例如深的)掺杂III族氮化物层。能级过渡金属掺杂剂。这种层和/或方法还可以包括用浓度小于约1×10 17 Sup> cm -3 Sup>的浅能级掺杂剂掺杂III族氮化物层并进行掺杂。 III族氮化物层具有深能级过渡金属掺杂剂。深能级过渡金属掺杂剂的浓度大于浅能级p型掺杂剂的浓度。
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