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TDDB test pattern and method for testing TDDB of MOS capacitor dielectric

机译:MOS电容器电介质的TDDB测试图和测试TDDB的方法

摘要

A Time Dependent Dielectric Breakdown (TDDB) test pattern circuit, which can reduce testing time and statistically improve a precision of measurement as well as a method for testing the test pattern circuit are discussed. Typically, a test pattern circuit includes in plurality of unit test patterns. Each unit test pattern includes a capacitor connected to a stress voltage. The stress voltage is applied to the capacitor and the current flowing from the capacitor is measured over time. The dielectric in the capacitor breaks down over time and at a certain point, the current from the capacitor changes suddenly. Unfortunately, the convention test pattern circuit requires serial testing of each unit cell, and therefore, the measuring time is significant when there are many unit cells involved. The circuit allows for the measurements to take place simultaneously for all unit cells within the test pattern circuit. This greatly reduces the testing time, allows for greater amount of data to be obtained which improves the statistically accuracy, and reduces costs as well.
机译:讨论了一种可减少测试时间并从统计角度提高测量精度的时变介电击穿(TDDB)测试图电路,以及测试该测试图电路的方法。通常,测试图案电路包括多个单元测试图案。每个单元测试图案包括连接到应力电压的电容器。将应力电压施加到电容器,并随时间测量从电容器流出的电流。电容器中的电介质会随着时间的流逝而击穿,并且在特定点上,电容器的电流会突然变化。不幸的是,常规测试图案电路需要对每个单位电池进行串行测试,因此,当涉及许多单位电池时,测量时间很长。该电路允许对测试图案电路内的所有单位单元同时进行测量。这大大减少了测试时间,可以获取更多的数据,从而提高了统计准确性,并降低了成本。

著录项

  • 公开/公告号US7479797B2

    专利类型

  • 公开/公告日2009-01-20

    原文格式PDF

  • 申请/专利权人 HA ZOONG KIM;

    申请/专利号US20060643656

  • 发明设计人 HA ZOONG KIM;

    申请日2006-12-22

  • 分类号G01R31/28;G01R31/14;

  • 国家 US

  • 入库时间 2022-08-21 19:29:50

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