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Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces

机译:用于在将材料沉积到微型设备工件上的过程中控制气体脉冲的设备

摘要

An apparatus for depositing materials onto a micro-device workpiece includes a gas source system configured to provide a first precursor, a second precursor, and a purge gas. The apparatus can also include a valve assembly coupled to the gas source system. The valve assembly is configured to control a flow of the first precursor, a flow the second precursor, and a flow of the purge gas. Another component of the apparatus is a reaction chamber including an inlet coupled to the valve assembly, a workpiece holder in the reaction chamber, and an outlet downstream from the workpiece holder. The apparatus also includes a monitoring system and a controller. The monitoring system comprises a radiation source that directs a selected radiation through the reaction chamber and a detector that senses a parameter of the radiation directed through the reaction chamber. The controller is operatively coupled to the monitoring system and the valve assembly. The controller contains computer operable instructions to terminate the flow of the first precursor, the flow of the second precursor and/or the flow of the purge gas based on the parameter sensed by the monitoring system in real-time during a deposition cycle of a workpiece.
机译:用于将材料沉积到微器件工件上的设备包括气体源系统,该气体源系统构造成提供第一前驱体,第二前驱体和吹扫气体。该设备还可以包括连接到气体源系统的阀组件。阀组件构造成控制第一前体的流量,第二前体的流量和吹扫气体的流量。该设备的另一部件是反应室,该反应室包括联接至阀组件的入口,反应室中的工件支架以及在工件支架下游的出口。该设备还包括监视系统和控制器。该监测系统包括:辐射源,该辐射源引导选择的辐射通过反应室;检测器,其检测被引导通过反应室的辐射的参数。控制器可操作地联接至监测系统和阀组件。所述控制器包含计算机可操作指令,以基于在工件的沉积循环期间由监控系统实时感测到的参数来终止第一前体的流动,第二前体的流动和/或吹扫气体的流动。 。

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