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CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers

机译：NMOS栅极介电层和PMOS栅极介电层中氮含量不同的CMOS器件

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摘要

The present invention provides a complementary metal oxide semiconductor (CMOS) device, a method of manufacture therefor, and an integrated circuit including the same. The CMOS device (100), in an exemplary embodiment of the present invention, includes a p-channel metal oxide semiconductor (PMOS) device (120) having a first gate dielectric layer (133) and a first gate electrode layer (138) located over a substrate (110), wherein the first gate dielectric layer (133) has an amount of nitrogen located therein. In addition to the PMOS device (120), the CMOS device further includes an n-channel metal oxide semiconductor (NMOS) device (160) having a second gate dielectric layer (173) and a second gate electrode layer (178) located over the substrate (110), wherein the second gate dielectric layer (173) has a different amount of nitrogen located therein. Accordingly, the present invention allows for the individual tuning of the threshold voltages for the PMOS device (120) and the NMOS device (160).

机译：本发明提供了互补金属氧化物半导体（CMOS）器件，其制造方法以及包括该互补金属氧化物半导体的集成电路。在本发明的示例性实施例中，CMOS器件（ 100 ）包括具有第一栅极电介质的p沟道金属氧化物半导体（PMOS）器件（ 120 ）。层（ 133 ）和位于衬底（ 110 ）上方的第一栅电极层（ 138 ），其中第一栅介质层（< B> 133 ）中有一定量的氮。除了PMOS器件（ 120 ），CMOS器件还包括具有第二栅极介电层（ 160 ）的n沟道金属氧化物半导体（NMOS）器件（ 160 ）。 173 ）和位于衬底（ 110 ）上方的第二栅电极层（ 178 ），其中第二栅介电层（ 173 ）中的氮含量不同。因此，本发明允许对PMOS器件（ 120 ）和NMOS器件（ 160 ）的阈值电压进行单独调整。 展开▼

著录项

公开/公告号US7514308B2

专利类型

公开/公告日2009-04-07

原文格式PDF

申请/专利权人 AJITH VARGHESE;HUSAM N. ALSHAREEF;RAJESH KHAMANKAR;
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申请/专利号US20070745930

发明设计人 AJITH VARGHESE;HUSAM N. ALSHAREEF;RAJESH KHAMANKAR;
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申请日2007-05-08

分类号H01L21/336;

国家 US

入库时间 2022-08-21 19:29:16

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