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Image pickup apparatus and image pickup system having plural semiconductor regions of a same conductivity type, with one of the semiconductor regions having a higher impurity concentration than and providing a potential to another of the semiconductor regions
Image pickup apparatus and image pickup system having plural semiconductor regions of a same conductivity type, with one of the semiconductor regions having a higher impurity concentration than and providing a potential to another of the semiconductor regions
A solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation.;A well 302 is formed on a wafer 301, and semiconductor layers 101a, 101b are formed in the well to constitute photodiodes. A well contact 306 is formed between the semiconductor layers 101a, 101b. Element isolation regions 303b, 303a are provided between the well contact and the semiconductor layers, and channel stop layers 307b, 307a are provided under the element isolation regions 303b, 303a. A conductive layer 304 is provided on the element isolation region 303b, and a side wall 308 is provided on a side face of the conductive layer 304. A distance a between an end of the element isolation region 303b and the conductive layer 304, a width b of the side wall 308 and a device isolation width c satisfy a relation ca≧b.
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机译:一种固态图像拾取装置,在相邻的光电转换元件之间的暗电流几乎没有差异或没有差异,并且即使在高速读出操作中也提供了高灵敏度和低暗电流。井 302 B在晶片 301 B>和半导体层 101 B> a, I> 101 B> b I>上形成在阱中形成以构成光电二极管。在半导体层 101 B> a I> ,101 B> b I>之间形成阱接触 306 B> 。在阱接触层和半导体层之间设置元件隔离区 303 B> b, I> 303 B> a I>,并且沟道停止在元素隔离区 303 B> <下提供 307 B> b, I> 307 B> a I> I> b, I> 303 B> a I>。在元件隔离区域 303 B> b I>上提供导电层 304 B>,并在其上提供侧壁 308 B>导电层 304 B>的侧面。元件隔离区域 303 B> b I>的一端与导电层 304 B>的距离a,侧壁的宽度b 308 B>和器件隔离宽度c满足关系c>a≥b。
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