首页> 外国专利> VACUUM PROCESSING CHAMBER SUITABLE FOR ETCHING HIGH ASPECT RATIO FEATURES AND COMPONENTS OF SAME

VACUUM PROCESSING CHAMBER SUITABLE FOR ETCHING HIGH ASPECT RATIO FEATURES AND COMPONENTS OF SAME

机译:真空处理室,适用于蚀刻高纵横比特征和相同部件

摘要

Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly (130) for use in the processing chamber (100). In one embodiment, a processing chamber (100) includes a chamber body (102) having a showerhead assembly (130) and substrate support (148) disposed therein. The showerhead assembly (130) includes at least two fluidly isolated plenums, a region transmissive to an optical metrology (140) signal, and a plurality of gas passages (242) formed through the showerhead assembly fluidly coupling the plenums to the interio volume of the chamber body.
机译:本发明的实施例提供一种适合于蚀刻高深宽比特征的方法和设备,例如处理室。其他实施例包括用于处理室(100)中的喷头组件(130)。在一个实施例中,处理腔室(100)包括腔室主体(102),腔室主体(102)具有布置在其中的喷头组件(130)和基板支撑件(148)。喷头组件(130)包括至少两个流体隔离的气室,可透射光学计量学(140)信号的区域,以及穿过喷头组件形成的多个气体通道(242),该多个气体通道将气室流体地耦合至腔室的内部容积。箱体。

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号