首页> 外国专利> PROCESS FOR WAFER LEVEL TREATMENT TO REDUCE STICTION AND PASSIVATE MICROMACHINED SURFACES AND COMPOUNDS USED THEREFOR

PROCESS FOR WAFER LEVEL TREATMENT TO REDUCE STICTION AND PASSIVATE MICROMACHINED SURFACES AND COMPOUNDS USED THEREFOR

机译:晶圆级处理以减少沉降并钝化微加工表面和所用化合物的方法

摘要

This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials.
机译:本发明公开了一种在微机械结构上仍处于晶片形式时(即,在将它们分离成离散装置以组装成包装之前)在微机械结构上形成耐用的抗粘表面的方法。该过程涉及材料的气相沉积以产生低静力表面。它还公开了对赋予芯片抗粘连性能有效的化学物质。这些包括聚苯基硅氧烷,硅烷醇封端的苯基硅氧烷和类似的材料。

著录项

  • 公开/公告号EP1258035A4

    专利类型

  • 公开/公告日2008-12-24

    原文格式PDF

  • 申请/专利权人 ANALOG DEVICES INC.;

    申请/专利号EP20010905118

  • 发明设计人 MARTIN JOHN R.;

    申请日2001-01-29

  • 分类号H01L21/31;H01L21/316;B81B3;B81C1;H01L21;H01L21/312;H01L21/469;

  • 国家 EP

  • 入库时间 2022-08-21 19:20:35

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