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Free-Standing III-N layers or devices obtained by selective masking of III-N layers during III-N layer growth
Free-Standing III-N layers or devices obtained by selective masking of III-N layers during III-N layer growth
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机译:自由站立的III-N层或在III-N层生长期间通过选择性掩蔽III-N层获得的器件
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摘要
A free-standing III-N wafer, wherein III denotes at least one element of the group III of the periodic Table of Elements, selected from Al, Ga and In, is obtained by a process comprising providing a III-N layer having a surface, which comprises more than one facet, and selectively depositing a mask material only on one or multiple, but not on all facets during a III-N layer growth process. Thereby, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.
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