METHOD OF FABRICATING MASK USING MODEL-BASED OPTICAL PROXIMITY EFFECT CORRECTION AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method of fabricating a mask using the model-based optical proximity effect correction and a method of fabricating a semiconductor device using the same are provided to prevent the generation of the defect at the ray out step by deciding upon the layout which is previously suitable for the photo lithography process. A design rule of the circuit patterns arranged on a mask is determined(S110). The circuit patterns are light block film patterns. The schematic layout of circuit patterns is designed based on the design rule of the determined circuit patterns(S120). Optical models about circuit patterns are generated based on the schematic layout of circuit patterns(S130). LFL(Lithography Friendly Layout) circuit patterns of the circuit pattern of the mask image are generated based on the generated optical model(S140). The layout of the circuit pattern arranged based on LFL circuit patterns in the mask image is designed(S150). OPC is performed about the circuit patterns(S160). The mask is manufactured based on the OPC circuit patterns(S170).