GROUP 3 NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE DEVICE OF A VERTICAL STRUCTURE AND A MANUFACTURING METHOD THEREOF, CAPABLE OF IMPROVING AN LED BY INCREASING HORIZONTAL CURRENT SPREADING TO A HORIZONTAL DIRECTION

摘要

PURPOSE: A group 3 nitride based semiconductor light emitting diode device of a vertical structure and a manufacturing method thereof are provided to improve a yield and workability of a fab process by suppressing the bending of a wafer.;CONSTITUTION: A light emitting structure for a light emitting diode device includes a lower nitride based clad layer(20), a nitride based active layer(30), and a super lattice structure(90) in a partial n type electrode structure. A p type electrode structure(110) includes a current blocking structure(112) and a reflective current spreading layer in the lower side of the light emitting structure. A heat sink support is formed in the lower side of the p type electrode structure. A p type ohmic contact electrode pad is formed in the lower side of the heat sink support. The super lattice structure is a transparent multilayer made of different dopant and carbon nitride.;COPYRIGHT KIPO 2010