METHOD AND APPARATUS FOR LOW TEMPERATURE PYROMETRY USEFUL FOR THERMALLY PROCESSING SILICON WAFERS

摘要

Rapid heat treatment processing (RTP) system (110) including a transmission pyrometer (12) monitoring the temperature dependent absorption of the silicon wafer 32 with respect to the radiation from the RTP lamps (46) at a reduced power level. The value of the un-normalized photodetector photocurrent produced a lookup table that associates the lamp and wafer temperature and copying. Correction step (170) measures the photocurrent with known wafer and lamp temperature, all photocurrent screen normalized measured thereafter 142. Transmission pyrometer may be used in the pre-heating step for a high temperature process including a can be used for closed-loop control for the heat treatment of less than 500 ℃, copy or pyrometer in a closed-loop control. Pre-heating temperature ramp rate could be measured and controlled by the initial sangseungryulreul readjust the lamp power accordingly. Copying and transmission pyrometers may be included in the integrated structure 190, with the beam-splitter 204 for splitting the radiation from the wafer.