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首页> 外文期刊>Applied thermal engineering: Design, processes, equipment, economics >Thermal design aspects for improving temperature homogeneity of silicon wafer during thermal processing in microlithography
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Thermal design aspects for improving temperature homogeneity of silicon wafer during thermal processing in microlithography

机译:用于在微光学加工过程中提高硅晶片温度均匀性的热设计方面

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Stringent temperature control is of great importance in the post-exposure baking of the lithography process, and this is usually maintained through the lamp heating and multizone heating method, which demands a precise control system. There is a vast scope for the wafer temperature homogeneity improvement by considering the thermal aspects in bake station design. In this study, both an experimental and a transient numerical analysis are carried out to examine the factors that could seriously affect the temperature uniformity of the wafer during the baking process. It is found that the guide plate arrangement, guide plate slope, and the air gap between the lid and hot plate play a critical role in controlling the wafer temperature uniformity. On this basis, some further improved bake stations are proposed to attain a better temperature homogeneity across the wafer. The performance of the improved designs is analyzed numerically. Yet, a better design based on the simulation is developed and tested experimentally. The new design features a 2.5 degrees guide plate with the funnel arrangement subject to the air gap condition, offering a temperature homogeneity within 0.2-0.3 degrees C on a 6 '' wafer.
机译:严格的温度控制在光刻工艺的曝光后烘烤方面具有重要意义,这通常通过灯加热和多态加热方法维持,这需要一种精确的控制系统。通过考虑烘烤站设计中的热方面,晶圆温度均匀改善存在巨大范围。在该研究中,进行实验和瞬态数值分析,以检查在烘焙过程中可能严重影响晶片温度均匀性的因素。发现引导板布置,引导板斜面和盖子和热板之间的气隙在控制晶片温度均匀性方面发挥着关键作用。在此基础上,提出了一些进一步改善的烘烤站以在晶片上获得更好的温度均匀性。在数值上分析改进设计的性能。然而,基于模拟的更好的设计是通过实验开发和测试的。新设计采用2.5度导板,漏斗布置受气隙条件,在6''晶片上提供0.2-0.3度C的温度均匀性。

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