DOPING METHODS FOR FULLY-DEPLETED SOI STRUCTURE, AND DEVICE COMPRISING THE RESULTING DOPED REGIONS

摘要

The present invention is fully depleted silicon-on-insulator (FD-SOI) structure for doping methods and such relates to an apparatus that includes a region doped by the method. In one embodiment, a semiconductor device includes a bulk substrate (30A), the buried oxide film (30B) and a transistor formed on a silicon-on-insulator (SOI) substrate composed of the active layer (30C). Transistor comprises a gate electrode 36, the bulk substrate (30A) is doped to have a concentration of the first one of the dopant materials. The semiconductor device further comprises a doped region (42A) of the first formed in the bulk substrate (30A), the doped region (42A) of the first dopant material is doped with the same type of dopant material in the bulk substrate. Here, the first concentration of the dopant material in the doped region (42A) is greater than the first dopant concentration in the doped bulk substrate (30A). The doped region of the 1 (42A) is aligned with the gate electrode (36).