MANUFACTURING METHOD OF METAL SILICIDE THIN LAYER BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION WITHOUT ANNEALING

摘要

A method of manufacturing the metallic silicide layer using the plasma atomic layer deposition is provided to form the metal silicide without the thermal process and to maintain the thermal stability of the device structure. The metallic silicide layer is manufactured by the PE-ALD(plasma-enhanced atomic layer deposition) method. Firstly, the metal precursor is put into in the atomic layer deposition equipment. The metal precursor is absorbed on the semiconductor substrate. The evaporated metal precursor is reduced to metal by the gas plasma. The reducing metal reacts to the material including silicon to form the metal silicide. The material including silicon can be silane. The metal precursor can be the cobalt precursor, and the titanium precursor or the nickel precursor.