Sic - a semiconductor device with schottky - blocking layer diode

摘要

A semiconductor device with a blocking layer - schottky diode has: a sic - substrate (1) of a first conductivity type; a drift layer (2) on said substrate; an insulating film (3) on the drift layer with an opening (3a) in a cell area; a schottky - blocking layer diode (10) with a schottky - electrode (4), which via the opening of the insulating film to the drift layer, and an ohmic electrode (5) on said substrate; a finishing structure (6, 7) with a the cell area surrounding resurf - layer (6); and a plurality of layers (8) of a second conductivity type on an inner side of the resurf - layer. The layers of the second conductivity type and the drift layer form a p - n - diode. The schottky - electrode has a first schottky - electrode (4a) which, with an ohmic contact to the layers of the second conductivity type, and a second schottky - electrode (4b) which, with a schottky - contact with the drift layer is adjacent.