Silicon carbide - a semiconductor device having a schottky - blocking layer diode and method of making same

摘要

Sic - a semiconductor device having a schottky diode - blocking layer, comprising:a substrate (1), which is made of sic and a first conductivity type, wherein the substrate (1) a main surface, and a rear surface includes;a drift layer (2), which is made of sic and the first conductivity type, the drift layer on the main surface of the substrate (1) is situated, and a lower impurity concentration than the substrate (1) comprises;a schottky - electrode (4), which is positioned on the drift layer (2) is located and a schottky - contact with a surface of the drift layer (2); andan ohmic electrode (5), which is positioned on the rear surface of the substrate (1).the schottky - electrode (4) the drift layer (2) directly are contacted in such a way that the schottky - electrode (4) and the drift layer (2) are lattice matched,the schottky - electrode (4) is formed by metal grains,the drift layer (2) by means of a sic - matrix is formed,the metal grains of the schottky - electrode (4) and the sic - matrix of the drift layer (2) are lattice matched, andthe metal grains of the schottky - electrode (4) have a granular structure.