Silicon carbide - a semiconductor device with schottky - blocking layer diode and method for its production

摘要

Silicon carbide - a semiconductor device having a schottky - blocking layer diode, wherein the silicon carbide - a semiconductor device having:– a silicon carbide substrate (1) first conductivity type with a first surface (1a) and one of the first surface (1a) opposite second surface (1b);– a silicon carbide - drift layer (2) first conductivity type on the first surface (1a) of the substrate (1), wherein the drift layer (2) a lower impurity concentration than the substrate (1) comprises;– a schottky - electrode (4) on the drift layer (2), wherein the schottky - electrode (4) in a cell area of the drift layer (2) a schottky - contact with a surface of the drift layer (2); and– an ohmic electrode (5) on the second surface (1b) of the substrate (1), wherein– the schottky - electrode (4) has an oxide layer (4a), which are in direct contact with the surface of the drift layer (2), and of an oxide of a first metal is built up,– the first metal is molybdenum, titanium, nickel or an alloy of at least two of these elements is,– the..