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manufacturing method of an soi substrate by association of siliziumbasis zones and zones on gaas base
manufacturing method of an soi substrate by association of siliziumbasis zones and zones on gaas base
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机译:硅基区与gaas基上的区的结合制造soi衬底的方法
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摘要
The method involves providing a silicon-on-insulator substrate comprising a silicon support (2) with a silicon based thin layer whose orientation is parallel to a plane. A zone of the thin layer is preserved, and a non-preserved zone of the thin layer is removed till a dielectric layer (3) is exposed. The dielectric layer is opened in the non-preserved zone till a silicon face of the support is exposed. A disoriented germanium layer (7) is grown on the dielectric layer by liquid phase epitaxy or lateral epitaxy. Growth of gallium arsenide zone (8) is obtained from the disoriented germanium.
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