High-Characteristic-Temperature 1.3-μm-Band Laser on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method

摘要

We have developed high-performance 1.3-mum-band laser diodes on an InGaAs ternary substrate with a low indium content (In:0.1) grown by a novel bulk crystal growth technique called the traveling liquidus-zone (TLZ) method. This laser has a long-wavelength lasing of 1.28 mum and provides lasing operation up to 195degC by using a highly strained InGaAs quantum well. The characteristic temperatures are 130 K from 25 to 95degC and 95 K from 95 to 155degC. We investigated junction heating by comparing the lasing wavelengths for pulsed and continuous-wave (CW) operation. And, we showed the possibility of realizing a high-performance laser on an InGaAs ternary substrate.