首页>
外国专利>
METHOD FOR MANUFACTURING SOI SUBSTRATE COMBINING SILICON BASED ZONES AND GaAs ZONES
METHOD FOR MANUFACTURING SOI SUBSTRATE COMBINING SILICON BASED ZONES AND GaAs ZONES
展开▼
机译:基于硅的地带和GaAs地带相结合的SOI基体制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The method involves providing a silicon-on-insulator substrate comprising a silicon support (2) with a silicon based thin layer whose orientation is parallel to a plane. A zone of the thin layer is preserved, and a non-preserved zone of the thin layer is removed till a dielectric layer (3) is exposed. The dielectric layer is opened in the non-preserved zone till a silicon face of the support is exposed. A disoriented germanium layer (7) is grown on the dielectric layer by liquid phase epitaxy or lateral epitaxy. Growth of gallium arsenide zone (8) is obtained from the disoriented germanium.
展开▼