METHOD FOR MANUFACTURING SOI SUBSTRATE COMBINING SILICON BASED ZONES AND GaAs ZONES

摘要

The invention relates to a method for manufacturing an SOI substrate combining silicon-based zones and GaAs-based material zones in the thin film of the SOI substrate, the SOI substrate comprising a silicon support that successively supports a layer of silicon. dielectric material and a thin layer of silicon. The method comprises the following steps: providing an SOI substrate comprising a disoriented silicon support at an angle of between 2 degrees and 10 degrees, the thin silicon layer being oriented parallel to the plane (001) or (010) ), or (100) or (110) or (101) or (011) or (111), - preservation of at least one zone of the thin layer of silicon, - elimination of at least one unsprung area of the thin layer of silicon to reveal the layer of dielectric material, - opening, in said non-preserved area, of the layer of dielectric material to reveal the silicon support, - growth, from the support silicon revealed by said liquid phase epitaxial or lateral epitaxial opening of disoriented germanium on the layer of dielectric material revealed; - growth of GaAs-based material from the disoriented germanium obtained in the previous step.