Method of manufacturing a semiconductor device using the generation method and method of the backscattered intensity based on the underlying structure in the charged particle beam exposure

摘要

A method for generating backscattering intensity with which charged particles are backscattered to a resist layer when charged particle beam is irradiated onto the resist layer which is formed on plural layers, each of which includes a pattern of one substance or a plurality of substances. For the nSUPth /SUPlayer from the resist layer among the plural layers, there is provided, for each of the substances in the nSUPth /SUPlayer, a reflection coefficient rn, which corresponds with the number of particles reflected by the nSUPth /SUPlayer; a transmission coefficient tn, which corresponds with the number of particles transmitted by the nSUPth /SUPlayer; and a scatter distribution in which the charged particles are scattered within the nSUPth /SUPlayer. The generation method comprises a first step of generating the backscattering intensity by using the reflection coefficient rn, the transmission coefficient tn, and the scatter distribution.