Method of manufacturing a semiconductor device using the generation method and method of the backscattered intensity based on the underlying structure in the charged particle beam exposure

摘要

PROBLEM TO BE SOLVED: To calculate a backscattering intensity of electrons in a resist layer with a high accuracy taking into account scattering of electrons in a plurality of layers underlying the resist layer.;SOLUTION: The present method is a method of generating a backscattering intensity for such a case that a beam of charged particles is radiated onto a resist layer formed on a plurality of layers each including a pattern of a plurality of substances. The method includes steps of: giving to the nth layer a reflection coefficient rn for a reflection on the nth layer of the charged particles that have transmitted through the (n-1)th layer, a transmission coefficient tn for a transmission of the charged particles through the nth layer, and a length coefficient an which depends on a scattering length for a scattering of the charged particles in the interior of the nth layer, the reflection, transmission and length coefficients given on a substance-by-substance basis; and for a given target region of the nth layer, surface-integrating the scattering intensities of the charged particles contributed from peripheral regions as a function of an areal density n of the substance and the length coefficient an corresponding to the length between the peripheral region and the target region. The step of the nth layer is recursively processed from the first layer to the lowest layer, and the third charged particle intensity obtained for the layers underlying the resist layer is defined as backscattering intensity.;COPYRIGHT: (C)2009,JPO&INPIT