首页> 外国专利> Focus condition setting method during exposure, focus condition setting device during exposure, program, and recording medium capable of reading program

Focus condition setting method during exposure, focus condition setting device during exposure, program, and recording medium capable of reading program

机译:曝光期间的对焦条件设定方法,曝光期间的对焦条件设定装置,程序以及能够读取程序的记录介质

摘要

In the present invention, in the photolithography process in which a certain focus condition has been already set, a film on a substrate is exposed to only zero-order light of a light source transmitted, and then developed to reduce a first portion of the film on the substrate. Further, the film on the substrate is exposed to zero-order light and higher order light of the light source transmitted, and then developed to reduce a second portion of the film on the substrate. Thereafter, the film thicknesses of the first portion and the second portion are measured, and the measured film thicknesses of the first portion and the second portion are converted into line widths of a resist pattern by previously obtained correlations between the film thicknesses and the line widths. The converted line width of the second portion is then subtracted from the converted line width of the first portion, whereby the line width depending only on the focus component is calculated. Based on the line width, a new focus condition is set.
机译:在本发明中,在已经设定了一定聚焦条件的光刻工艺中,将基板上的膜仅暴露于透射的光源的零级光下,然后显影以减小膜的第一部分。在基材上。此外,将基板上的膜暴露于透射的光源的零级光和高阶光中,然后显影以减少基板上的膜的第二部分。之后,测量第一部分和第二部分的膜厚度,并且通过预先获得的膜厚度和线宽度之间的相关性,将测量的第一部分和第二部分的膜厚度转换为抗蚀剂图案的线宽度。 。然后从第一部分的转换后的线宽中减去第二部分的转换后的线宽,从而计算出仅取决于聚焦分量的线宽。基于线宽,设置新的聚焦条件。

著录项

  • 公开/公告号JP4361887B2

    专利类型

  • 公开/公告日2009-11-11

    原文格式PDF

  • 申请/专利权人 東京エレクトロン株式会社;

    申请/专利号JP20050059590

  • 发明设计人 田中 道夫;田所 真任;

    申请日2005-03-03

  • 分类号H01L21/027;G03F7/20;

  • 国家 JP

  • 入库时间 2022-08-21 18:59:23

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