METHOD AND APPARATUS FOR SETTING FOCUSING CONDITION IN EXPOSURE, PROGRAM AND PROGRAM-READABLE RECORDING MEDIUM

摘要

PPROBLEM TO BE SOLVED: To exactly setting focusing conditions in exposure in a photolithographic process of a wafer. PSOLUTION: In a photolithographic process in which existing processing conditions are set, only the 0-order light of a light source is allowed to transmit to expose a film on a substrate, and then, the film is developed and a first portion of the film on the substrate is reduced. Also, the lights of 0-order and higher order than that of the light source are allowed to transmit to expose the film on the substrate, and then, the film is developed, and a second portion of the film on the substrate is reduced. After that, the film thicknesses of the first and second portions are measured and the measured film thicknesses of the first and second portions are converted into the line width of a resist pattern on the basis of the correspondence relation between a film thickness and a line width which are previously obtained. Then, the line width of the second portion is subtracted from the converted line width of the first portion to calculate a line width dependent on only the focus component. New focusing conditions are set on the basis of the calculated line width. PCOPYRIGHT: (C)2006,JPO&NCIPI