Plasma-assisted sputter deposition system

摘要

PROBLEM TO BE SOLVED: To provide a plasma-assisted sputter deposition system being capable of maintaining good and required qualities, and having a temperature-controllable wafer holder being at rest during the film deposition.;SOLUTION: The plasma-assisted sputter deposition system comprises: a reactor 1 into which a process gas for plasma generation is introduced; a doughnut-shaped electrode 2 to be sputtered by plasma, in which a lower surface thereof is angled to a surface of a wafer; a spinning plate 3 that spins on its central axis while moving over a circle above the doughnut-shaped electrode, in which the spinning plate contains magnet arrangement 4 parallel to the surface of the doughnut-shaped electrode; an electrical power sources 10 connected to the doughnut-shaped electrode, and a wafer holder 5 for placing a wafer 9 for film deposition, which is at rest during the film deposition.;COPYRIGHT: (C)2005,JPO&NCIPI