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Interconnect Structures, Methods for Fabricating Interconnect Structures, and Design Structures for a Radiofrequency Integrated Circuit

机译:互连结构,制造互连结构的方法和射频集成电路的设计结构

摘要

Interconnect structures that include a passive element, such as a thin film resistor or a metal-insulator-metal (MIM) capacitor, methods for fabricating an interconnect structure that includes a passive element, and design structures embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, such as a radiofrequency integrated circuit. A top surface of a dielectric layer is recessed relative to a top surface of a conductive feature in the dielectric layer. The passive element is formed on the recessed top surface of the dielectric layer and includes a layer of a conductive material that is coplanar with, or below, the top surface of the conductive feature.
机译:包括无源元件(例如薄膜电阻器或金属-绝缘体-金属(MIM)电容器)的互连结构,用于制造包括无源元件的互连结构的方法以及体现在用于设计的机器可读介质中的设计结构,制造或测试集成电路,例如射频集成电路。介电层的顶表面相对于介电层中的导电特征的顶表面凹陷。无源元件形成在介电层的凹陷的顶表面上,并且包括与导电特征的顶表面共面或在其下方的导电材料层。

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