首页> 外国专利> ELECTRICAL CONTACTS ON TOP OF WAVEGUIDE STRUCTURES FOR EFFICIENT OPTICAL MODULATION IN SILICON PHOTONIC DEVICES

ELECTRICAL CONTACTS ON TOP OF WAVEGUIDE STRUCTURES FOR EFFICIENT OPTICAL MODULATION IN SILICON PHOTONIC DEVICES

机译:硅光子器件中有效光学调制的波导结构顶部的电接触

摘要

A phase modulation waveguide structure includes one of a semiconductor and a semiconductor-on-insulator substrate, a doped semiconductor layer formed over the one of a semiconductor and a semiconductor-on-insulator substrate, the doped semiconductor portion including a waveguide rib protruding from a surface thereof not in contact with the one of a semiconductor and a semiconductor-on-insulator substrate, and an electrical contact on top of the waveguide rib. The electrical contact is formed of a material with an optical refractive index close to that of a surrounding oxide layer that surrounds the waveguide rib and the electrical contact and lower than the optical refractive index of the doped semiconductor layer. During propagation of an optical mode within the waveguide structure, the electrical contact isolates the optical mode between the doped semiconductor layer and a metal electrode contact on top of the electrical contact.
机译:相位调制波导结构包括半导体和绝缘体上半导体衬底之一,形成在半导体和绝缘体上半导体衬底之一之上的掺杂半导体层,该掺杂半导体部分包括从半导体衬底突出的波导肋。其表面不与半导体和绝缘体上半导体衬底之一接触,并且在波导肋的顶部上具有电接触。电触点由光学折射率接近包围波导肋和电触点的周围氧化物层的光学折射率并且低于掺杂半导体层的光学折射率的材料形成。在波导结构内的光学模式的传播期间,电触点使掺杂的半导体层与电触点顶部的金属电极触点之间的光学模式隔离。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号