Advanced Passive Silicon Photonic Devices With Asymmetric Waveguide Structures

摘要

Various passive photonic integrated devices have been developed successfully with silicon-on-insulator (SOI) nanowires in the past decade. It is well known that SOI-nanowire waveguides have ultrahigh index contrast ($Delta $) and ultrahigh birefringence. As a result, the structures and the design rules of a silicon photonic device are probably very different from the conventional case of using low-$Delta $optical waveguides. For example, some asymmetric waveguide structures have been used often to realize many silicon photonic devices developed recently. Furthermore, higher order modes have been involved in some of these silicon photonic devices. This paper discusses the special mode properties of silicon nanophotonic waveguides, including birefringence, mode dispersion, and mode hybridness. A review is then given on recent progress of these advanced passive silicon photonic devices with structural asymmetry, including on-chip polarization-handling devices, mode converters/(de)multiplexers, microring-resonator optical filters/switches, and Mach..Zehnder interferometer optical switches. Silicon photonic integrated circuits with these building blocks are also reviewed, including hybrid (de)multiplexers and reconfigurable optical add..drop multiplexers.