STOCHASTIC SYNAPSE MEMORY ELEMENT WITH SPIKE-TIMING DEPENDENT PLASTICITY (STDP)

摘要

An active memory element is provided. One embodiment of the invention includes a bi-polar memory two-terminal element having polarity-dependent switching. A probability of switching of the bi-polar memory element between a first state and a second state decays exponentially based on time delay and a difference between received signals at the two terminals and a switching threshold magnitude.