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Method of Forming an Electrical Contact Between a Support Wafer and the Surface of a Top Silicon Layer of a Silicon-on-Insulator Wafer and an Electrical Device Including Such an Electrical Contact
Method of Forming an Electrical Contact Between a Support Wafer and the Surface of a Top Silicon Layer of a Silicon-on-Insulator Wafer and an Electrical Device Including Such an Electrical Contact
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机译:在支撑晶片和绝缘体上硅晶片的顶部硅层的表面之间形成电接触的方法以及包括这种电接触的电子设备
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摘要
Method of forming an electrical contact between a support wafer and a surface of a top silicon layer of a silicon-on-insulator wafer. The method comprises etching a cavity into the top silicon layer and the insulator layer. A selective epitaxial step is performed for growing an epitaxial layer of silicon inside the cavity up to the surface of the top silicon layer. An electrical device comprising an electrical contact between a support wafer and a surface of a top silicon layer of a silicon-on-insulator wafer formed according to the inventive method.
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