Integrated circuit having laterally dielectrically isolated active regions above an electrically contacted buried material, and method for producing the same

摘要

An integrated circuit is disclosed that includes a first layer made of active semiconductor material and extending along a first side of a buried layer, and trench structures, which cut through the layer made of active semiconductor material and have dielectric wall regions, whereby the dielectric wall regions isolate electrically subregions of the layer, made of active semiconductor material in the lateral direction, and whereby the trench structures, furthermore, have first inner regions, which are filled with electrically conductive material and contact the buried layer in an electrically conductive manner. The integrated circuit is notable in that the first wall regions of the trench structures completely cut through the buried layer and the second wall regions of the trench structures extend into the buried layer, without cutting it completely. Furthermore, a method for manufacturing such an integrated circuit is disclosed.