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ACCELERATING PHASE CHANGE MEMORY WRITES

机译:加速相变存储器写

摘要

In a phase change memory, the memory array may be written in relatively small chunks. The writing of data to the array and, particularly, the writing of set data, may be accelerated using a hardware accelerator. The hardware accelerator may include an edge detector which detects a short duration signal pulse to trigger the writing of the set data to a cell. As a result, the writing of data may be accelerated, reducing the time to write in some cases.
机译:在相变存储器中,可以以相对小的块写入存储器阵列。可以使用硬件加速器来加速向阵列的数据写入,尤其是对设置数据的写入。硬件加速器可以包括边缘检测器,该边缘检测器检测短时信号脉冲以触发将设置的数据写入单元。结果,可以加速数据的写入,从而在某些情况下减少了写入时间。

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