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Method of forming a planar combined structure of a bipolar junction transistor and n-type and p-type metal semiconductor field-effect transistors and method for forming the same
Method of forming a planar combined structure of a bipolar junction transistor and n-type and p-type metal semiconductor field-effect transistors and method for forming the same
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机译:形成双极型结型晶体管与n型和p型金属半导体场效应晶体管的平面组合结构的方法及其形成方法
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摘要
A planar combined structure of a bipolar junction transistor (BJT) and n-type/p-type metal semiconductor field-effect transistors (MESFETs) and a method for forming the structure. The n-type GaN MESFET is formed at the same time when an inversion region (an emitter region) of the GaN BJT is formed by an ion implantation or impurity diffusion method by using a particular mask design, while a p-type GaN region is at the same time is formed as the p-type GaN MESFET. Namely, the n-type channel of the n-type MESFET is formed by the ion implantation or impurity diffusion method when the BJT is formed with the same ion implantation or impurity diffusion method performed, while a region of the p-type GaN without being subject to the ion implantation or impurity diffusion method is formed as the p-type MESFET. As such, the BJT is formed currently with the n-type/p-type MESFETs on the same GaN crystal growth layer as a planar structure.
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