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Organic BARC etch process capable of use in the formation of low K dual damascene integrated circuits
Organic BARC etch process capable of use in the formation of low K dual damascene integrated circuits
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机译:可用于形成低K双镶嵌集成电路的有机BARC蚀刻工艺
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摘要
In some implementations, a method is provided in a plasma reactor for etching a trench in an organic planarization layer of a resist structure comprising a photoresist mask structure over a hardmask masking the organic planarization layer. This may include introducing into the plasma reactor an etchant gas chemistry including N2, H2, and O2 and etching a masked organic planarization layer using a plasma formed from the etchant gas chemistry. This may include etching through the planarization layer to form a trench with a single etch step.
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