HAFNIUM AND ZIRCONIUM PYRROLYL-BASED ORGANOMETALLIC PRECURSORS AND USE THEREOF FOR PREPARING DIELECTRIC THIN FILMS

摘要

Hafnium and zirconium pyrrolyl-based organometallic precursors and methods of use thereof are provided to prepare metal-containing dielectric thin films by a vapor deposition process. The organometallic precursors correspond in structure to Formula I or dimers of Formula I: [(R)nPy]M(L)3 (Formula I) wherein: R is independently selected from the group consisting of alkyl, alkoxy and NR1R2; R1 and R2 are each independently hydrogen or alkyl; n is zero, 1, 2, 3 or 4; Py is pyrrolyl; M is Hf or Zr; L is selected from the group consisting of alkyl, alkoxy and NR1R2.